1. Hoʻohui pū ʻana o Solvothermal
1. Makalākiō mea?
Hoʻohui ʻia ka pauda Zinc a me ka pauda selenium ma kahi ratio molar 1:1, a hoʻohui ʻia ka wai deionized a i ʻole ethylene glycol ma ke ʻano he mea hoʻoheheʻe 35..
2 .Kūlana pane
o Ka wela wela: 180-220°C
o Ka manawa pane: 12-24 hola
o Paʻi: E mālama i ke kaomi i hana ʻia iā ia iho i loko o ka ipu hao
ʻO ka hui pololei o ka zinc a me ka selenium e hoʻomaʻamaʻa ʻia e ka hoʻomehana ʻana e hana i nā crystals zinc selenide nanoscale 35.
3.Kaʻina hana ma hope o ka mālama ʻana?
Ma hope o ka hopena, ua centrifuged, holoi ʻia me ka ammonia dilute (80 °C), methanol, a maloʻo maloʻo (120 °C, P₂O₅).btainhe pauda > 99.9% maemae 13.
2. Keʻano o ka hoʻoheheʻe ʻana i ka mahu
1.Ka hoʻomaʻamaʻa mua ʻana i nā mea maka
ʻO ka maʻemaʻe o ka zinc maka mea ≥ 99.99% a waiho ʻia i loko o kahi pahu graphite
o Lawe ʻia ke kinoea hydrogen selenide e ka lawe kinoea argon6.
2 .Hoʻomalu mahana
o Zinc evaporation zone: 850-900°C
o Wahi waiho: 450-500°C
ʻO ka waiho ʻana o ka uahu zinc a me ka hydrogen selenide e ka ʻanuʻu wela 6.
3 .Nā palena kinoea
o Argon kahe: 5-10 L / min
o Pumi hapa o ka hydrogen selenide:0.1-0.3 atm
Hiki i ka helu deposition ke hiki i ka 0.5-1.2 mm / h, ka hopena i ke kūkulu ʻia ʻana o 60-100 mm mānoanoa polycrystalline zinc selenide 6.
3. ʻO ke ʻano hana hoʻopaʻa paʻa pololei
1. Makaka hooponopono waiwai?
Hoʻopili ʻia ka solution zinc chloride me ka solution oxalic acid e hana i ka zinc oxalate precipitate, i maloʻo a lepo a hui pū ʻia me ka pauka selenium ma ka ratio o 1:1.05 molar 4..
2 .Nā ʻāpana hoʻohālikelike wela
o Ka wela wela o ka umu ahi: 600-650°C
o E mālama i ka manawa mahana: 4-6 hola
Hoʻokumu ʻia ka pauka Zinc selenide me ka nui o 2-10 μm e ka hopena diffusion solid-phase 4..
Hoʻohālikelike i nā kaʻina hana nui
ʻano hana | Topography huahana | Nui ʻāpana/mānoanoa | Crystallinity | Nā kahua noi |
Kaʻina Solvothermal 35 | Nanoballs/kookoo | 20-100 nm | Cubic sphalerite | Nā mea hana optoelectronic |
Waihona mahu 6 | Nā poloka polycrystalline | 60-100 mm | Hexagonal hale | Optics infrared |
ʻano hana paʻa paʻa 4 | ʻO nā pauka nui micron | 2-10 μm | ʻĀpana Cubic | Nā mea mua infrared |
ʻO nā mea nui o ka hoʻomalu kaʻina hana kūikawā: pono ke ʻano solvothermal e hoʻohui i nā surfactants e like me ka ʻakika oleic e hoʻoponopono ai i ka morphology 5, a ʻo ka waiho ʻana o ka mahu e pono ai ka ʻawaʻawa o ka substrate he
1. Ka waiho ʻana o ka mahu kino (PVD).
1 .Alanui ʻenehana
o ʻO ka Zinc selenide ka mea maka i mahu i loko o kahi mānoanoa a waiho ʻia ma luna o ka ʻili o ka substrate me ka hoʻohana ʻana i ka ʻenehana sputtering a i ʻole ka wela wela12.
o Hoʻomaʻamaʻa ʻia nā kumu hoʻoheheʻe o ka zinc a me ka selenium i nā ʻanuʻu wela like ʻole.?12.
2 .Ka hooponopono ana
o Māmā: ≤1×10⁻³ Pa
o Ka mahana wela: 200–400°C
o Ka helu waiho ʻana:0.2–1.0 nm/s
Hiki ke hoʻomākaukau ʻia nā kiʻi ʻoniʻoni Zinc selenide me ka mānoanoa o 50–500 nm no ka hoʻohana ʻana i nā optics infrared 25.
2. Mechanical wili wili poepoe
1.Ka lawelawe ʻana i nā mea maka
o Hoʻohui ʻia ka pauda Zinc (purity≥99.9%) me ka pauka selenium ma kahi ratio molar 1:1 a hoʻouka ʻia i loko o ka pahu wili pōlele kila 23.
2 .Kaʻina hana
o Ka manawa wili poepoe: 10–20 hola
Ka wikiwiki: 300–500 rpm
o Lakiō pele: 10:1 (zirconia wili pōpō).
ʻO nā nanoparticles Zinc selenide me ka nui o 50-200 nm i hoʻokumu ʻia e nā hopena hoʻohui mechanical, me ka maʻemaʻe o> 99% 23.
3. Hot kaomi sintering ala
1 .Hoʻomākaukau mua
o Zinc selenide nanopowder (ka nui ʻāpana <100 nm) i hoʻohui ʻia e ke ʻano solvothermal ma ke ʻano he mea maka 4.
2 .Sintering parameter
o Ka wela: 800–1000°C
o Pumi: 30–50 MPa
o E mālama i ka mahana: 2–4 hola
Loaʻa ka nui o ka huahana ma> 98% a hiki ke hana ʻia i loko o nā ʻāpana optical nui e like me nā puka makani infrared a i ʻole nā lens 45.
4. Epitaxy kukuna molekula (MBE).
1.Kaiapuni maloʻo ultra-kiʻekiʻe
o Māmā: ≤1×10⁻⁷ Pa
ʻO ka zinc a me ka selenium molecular beam e hoʻomalu pono i ke kahe ma ke kumu hoʻoheheʻe electron beam6.
2.Nā palena ulu
o Ke wela kumu: 300–500°C (Hoʻohana pinepine ʻia nā mea hoʻohana ʻia ʻo GaAs a i ʻole ka sapphire substrates).
o Laki ulu:0.1–0.5 nm/s
Hiki ke hoʻomākaukau ʻia nā kiʻi ʻoniʻoni lahilahi zinc selenide ma ka mānoanoa o 0.1-5 μm no nā mea optoelectronic kiʻekiʻe..
Ka manawa hoʻouna: Apr-23-2025